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GE Fanu|CM400RGICH1AFD|IGBT Module
SKU: CM400RGICH1AFD

  • Manufacturer: GE Fanuc

  • Product No.: CM400RGICH1AFD

  • Condition：In stock

  • Product Type: IGBT Module

  • Product Origin: USA

  • Payment:T/T, Western Union

  • Weight: 3600g

  • Shipping port: Xiamen

  • Warranty: 12 months

GE Fanuc CM400RGICH1AFD IGBT Module

Description
The GE Fanuc CM400RGICH1AFD is a high-power insulated gate bipolar transistor (IGBT) module designed for use in industrial motor drives, inverters, and power conversion systems.

Features
Dual IGBT configuration with built-in freewheeling diodes. Optimized for high switching frequency and low conduction loss. Includes NTC thermistor for temperature monitoring.

Technical Specifications
Collector-emitter voltage rating (VCES): 1200 V
Continuous collector current (IC): 400 A at 25°C
Peak collector current (ICM): 800 A
Gate-emitter voltage (VGES): ±20 V maximum
Switching energy (Eon + Eoff): approx. 250 mJ at 600 V, 400 A, 150°C
Operating junction temperature: –40°C to +150°C
Thermal resistance (Rth(j-c)): 0.035°C/W
NTC thermistor resistance: 5 kΩ at 25°C
Isolation voltage: 4000 V AC (1 min)

Order and Warranty Information

Terms of Purchase and Returns

Detailed guidelines on minimum order quantity, delivery times, payment options, warranty, and return policies.

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We gladly accept bulk orders, with a minimum order quantity of just one unit.

Upon request, we can provide all necessary documents, including Certificates of Origin/Conformance and other required export paperwork.

We accept 100% T/T (Telegraphic Transfer) payment before shipping. For items with lead times, a 30% deposit is required upfront, with the remaining 70% payable before shipment. For RMB transfers, please contact us if you have an agent in China.

All new and original items come with a standard one-year warranty. For extended warranty options, feel free to contact us for pricing details.

We prioritize your satisfaction. If you need to return an item, it must be done within 30 days of purchase. The product must be unused, unopened, and in its original packaging, including all accessories. Refunds will be processed within 5-7 business days of receiving the return. Please note, shipping and handling charges are non-refundable.
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GE Fanu|CM400RGICH1AFD|IGBT Module
GE Fanu|CM400RGICH1AFD|IGBT Module
GE Fanu|CM400RGICH1AFD|IGBT Module
GE Fanu|CM400RGICH1AFD|IGBT Module
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GE Fanu|CM400RGICH1AFD|IGBT Module

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In stock
Descriptions

GE Fanuc CM400RGICH1AFD IGBT Module

Description
The GE Fanuc CM400RGICH1AFD is a high-power insulated gate bipolar transistor (IGBT) module designed for use in industrial motor drives, inverters, and power conversion systems.

Features
Dual IGBT configuration with built-in freewheeling diodes. Optimized for high switching frequency and low conduction loss. Includes NTC thermistor for temperature monitoring.

Technical Specifications
Collector-emitter voltage rating (VCES): 1200 V
Continuous collector current (IC): 400 A at 25°C
Peak collector current (ICM): 800 A
Gate-emitter voltage (VGES): ±20 V maximum
Switching energy (Eon + Eoff): approx. 250 mJ at 600 V, 400 A, 150°C
Operating junction temperature: –40°C to +150°C
Thermal resistance (Rth(j-c)): 0.035°C/W
NTC thermistor resistance: 5 kΩ at 25°C
Isolation voltage: 4000 V AC (1 min)