GE Fanu|CM400RGICH1AFD|IGBT Module
GE Fanuc CM400RGICH1AFD IGBT Module
Description
The GE Fanuc CM400RGICH1AFD is a high-power insulated gate bipolar transistor (IGBT) module designed for use in industrial motor drives, inverters, and power conversion systems.
Features
Dual IGBT configuration with built-in freewheeling diodes. Optimized for high switching frequency and low conduction loss. Includes NTC thermistor for temperature monitoring.
Technical Specifications
Collector-emitter voltage rating (VCES): 1200 V
Continuous collector current (IC): 400 A at 25°C
Peak collector current (ICM): 800 A
Gate-emitter voltage (VGES): ±20 V maximum
Switching energy (Eon + Eoff): approx. 250 mJ at 600 V, 400 A, 150°C
Operating junction temperature: –40°C to +150°C
Thermal resistance (Rth(j-c)): 0.035°C/W
NTC thermistor resistance: 5 kΩ at 25°C
Isolation voltage: 4000 V AC (1 min)
GE Fanu|CM400RGICH1AFD|IGBT Module
GE Fanu|CM400RGICH1AFD|IGBT Module
GE Fanuc CM400RGICH1AFD IGBT Module
Description
The GE Fanuc CM400RGICH1AFD is a high-power insulated gate bipolar transistor (IGBT) module designed for use in industrial motor drives, inverters, and power conversion systems.
Features
Dual IGBT configuration with built-in freewheeling diodes. Optimized for high switching frequency and low conduction loss. Includes NTC thermistor for temperature monitoring.
Technical Specifications
Collector-emitter voltage rating (VCES): 1200 V
Continuous collector current (IC): 400 A at 25°C
Peak collector current (ICM): 800 A
Gate-emitter voltage (VGES): ±20 V maximum
Switching energy (Eon + Eoff): approx. 250 mJ at 600 V, 400 A, 150°C
Operating junction temperature: –40°C to +150°C
Thermal resistance (Rth(j-c)): 0.035°C/W
NTC thermistor resistance: 5 kΩ at 25°C
Isolation voltage: 4000 V AC (1 min)
