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ABB|5SHX08F4502|IGCT Gate Unit
SKU: 5SHX08F4502

  • Manufacturer: ABB

  • Product No.: 5SHX08F4502

  • Condition：Em estoque

  • Product Type: IGCT Gate Unit

  • Product Origin: USA

  • Payment:T/T, Western Union

  • Weight: 780g

  • Shipping port: Xiamen

  • Warranty: 12 months

ABB 5SHX08F4502 IGCT Gate Unit

Description

The ABB 5SHX08F4502 is an Integrated Gate-Commutated Thyristor (IGCT) gate unit designed for high-reliability converter applications, supporting standardized control parameters to enable efficient operation in topologies like Voltage/Current Source Inverters and Static Breakers.

Features

    • Standardized control parameters for turn-on/off pulses, gate inductance, and back-porch current.
    • Two generations (A/B) with shared circuitry but different mechanical/drive specifications.
    • Robust optical control interface with EMI resistance, using 1 mm POF fiber (200 μm HCS for long distances).
    • Comprehensive diagnostics/protection: status feedback, fault detection, and optional anode voltage monitoring (Gen B).
    • Industrial-grade environmental compliance for thermal, vibration, and electromagnetic stress.

Technical Specifications

    • Power Supply:
      • Input voltage (VGIN,RMS): Must stay within datasheet-specified range; square-wave AC only (avoid sinusoidal).
      • Start-up: Requires ≥28 V during start-up; peak current consumption may cause voltage dips, necessitating direct measurement at connector X1.
      • Burst capability: Handles high-current pulses (e.g., 100 pulses of 3 kA within 20 ms with VGAC ≥40 V, dependent on model-specific factor).
    • Switching Performance:
      • Turn-on/off delay: ~2.8 μs (50% command signal to 50% gate-cathode voltage VGK).
      • Pulse widths: Minimum ON/OFF pulses follow IGCT datasheet; glitch filter ignores pulses <400 ns.
      • Re-triggering: External re-trigger via 0.7–1.1 μs OFF pulses during on-state, with earliest re-trigger >20 μs after turn-on.
    • Optical Interface:
      • 650 nm wavelength with HFBR-1528/HFBR-2521Z components.
      • Fiber requirements: 1 mm POF for short distances; 200 μm HCS for >15 m; bend radius ≥35 mm to avoid attenuation.
    • Environmental Limits:
      • Thermal: Lifetime operation dependent on load; capacitor lifetime ~20 years with forced air-cooling (air velocity >0.5 m/s).
      • Vibration: Compliant with IEC 68: 5–57 Hz (±0.175 mm sweep), 57–150 Hz (2.5gn), shock up to 30gn/11 ms.
      • EMI immunity: Withstands dv/dt >20 kV/μs (4 kV amplitude), di/dt 5 kA/μs (7 kA amplitude), and magnetic fields from 40 kA coils at 30 cm distance.
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Termos de Compra e Devoluções

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Aceitamos pedidos em grandes quantidades, com quantidade mínima de pedido de apenas uma unidade.

Mediante solicitação, podemos fornecer todos os documentos necessários, incluindo Certificados de Origem/Conformidade e outros documentos de exportação necessários.

Aceitamos pagamento de 100% T/T (transferência telegráfica) antes do envio. Para itens com prazo de entrega, é necessário um depósito antecipado de 30%, sendo os 70% restantes pagos antes do envio. Para transferências em RMB, entre em contato conosco se tiver um agente na China.

Todos os itens novos e originais vêm com garantia padrão de um ano. Para opções de garantia estendida, sinta-se à vontade para entrar em contato conosco para obter detalhes de preços.

Priorizamos a sua satisfação. Se precisar devolver um item, isso deverá ser feito no prazo de 30 dias após a compra. O produto deve estar sem uso, fechado e em sua embalagem original, incluindo todos os acessórios. Os reembolsos serão processados ​​dentro de 5 a 7 dias úteis após o recebimento da devolução. Observe que as despesas de envio e manuseio não são reembolsáveis.
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Comparação de Produto

ABB|5SHX08F4502|IGCT Gate Unit
ABB|5SHX08F4502|IGCT Gate Unit
ABB|5SHX08F4502|IGCT Gate Unit
Produto atual Atual
ABB

ABB|5SHX08F4502|IGCT Gate Unit

Opções
Em estoque
Descrições
ABB 5SHX08F4502 IGCT Gate Unit

Description

The ABB 5SHX08F4502 is an Integrated Gate-Commutated Thyristor (IGCT) gate unit designed for high-reliability converter applications, supporting standardized control parameters to enable efficient operation in topologies like Voltage/Current Source Inverters and Static Breakers.

Features

    • Standardized control parameters for turn-on/off pulses, gate inductance, and back-porch current.
    • Two generations (A/B) with shared circuitry but different mechanical/drive specifications.
    • Robust optical control interface with EMI resistance, using 1 mm POF fiber (200 μm HCS for long distances).
    • Comprehensive diagnostics/protection: status feedback, fault detection, and optional anode voltage monitoring (Gen B).
    • Industrial-grade environmental compliance for thermal, vibration, and electromagnetic stress.

Technical Specifications

    • Power Supply:
      • Input voltage (VGIN,RMS): Must stay within datasheet-specified range; square-wave AC only (avoid sinusoidal).
      • Start-up: Requires ≥28 V during start-up; peak current consumption may cause voltage dips, necessitating direct measurement at connector X1.
      • Burst capability: Handles high-current pulses (e.g., 100 pulses of 3 kA within 20 ms with VGAC ≥40 V, dependent on model-specific factor).
    • Switching Performance:
      • Turn-on/off delay: ~2.8 μs (50% command signal to 50% gate-cathode voltage VGK).
      • Pulse widths: Minimum ON/OFF pulses follow IGCT datasheet; glitch filter ignores pulses <400 ns.
      • Re-triggering: External re-trigger via 0.7–1.1 μs OFF pulses during on-state, with earliest re-trigger >20 μs after turn-on.
    • Optical Interface:
      • 650 nm wavelength with HFBR-1528/HFBR-2521Z components.
      • Fiber requirements: 1 mm POF for short distances; 200 μm HCS for >15 m; bend radius ≥35 mm to avoid attenuation.
    • Environmental Limits:
      • Thermal: Lifetime operation dependent on load; capacitor lifetime ~20 years with forced air-cooling (air velocity >0.5 m/s).
      • Vibration: Compliant with IEC 68: 5–57 Hz (±0.175 mm sweep), 57–150 Hz (2.5gn), shock up to 30gn/11 ms.
      • EMI immunity: Withstands dv/dt >20 kV/μs (4 kV amplitude), di/dt 5 kA/μs (7 kA amplitude), and magnetic fields from 40 kA coils at 30 cm distance.