ABB FS450R17KE3 High-Voltage IGBT Power Module
ABB FS450R17KE3 – High-Voltage IGBT Power Module
ABB FS450R17KE3 is a high-voltage insulated-gate bipolar transistor (IGBT) power module designed for industrial motor drives, renewable energy inverters, and medium-power traction applications.
ABB FS450R17KE3 is a high-voltage insulated-gate bipolar transistor (IGBT) power module designed for industrial motor drives, renewable energy inverters, and medium-power traction applications.
Features
Low conduction and switching losses, integrated NTC temperature sensor, high short-circuit ruggedness, compatible with standard gate drivers.
Low conduction and switching losses, integrated NTC temperature sensor, high short-circuit ruggedness, compatible with standard gate drivers.
Technical Specifications
- Collector-emitter blocking voltage (VCES): 1,700 V
- Nominal collector current (IC): 450 A at 25 °C
- Maximum pulse current (ICM): 900 A
- Switching frequency range: 2 kHz to 8 kHz
- Saturation voltage (VCE(sat)): ≤ 2.45 V
- Gate-emitter control voltage: ±20 V
- Thermal resistance (Rth(j–c)): 0.12 K/W
- Operating junction temperature: -40 °C to +150 °C
- Package type: EconoDUAL 3
- Mounting torque: 0.8 N·m ±10%
ABB FS450R17KE3 High-Voltage IGBT Power Module
Current product
Current
Vendor:
ABB
ABB FS450R17KE3 High-Voltage IGBT Power Module
Regular price
$250.00
Sale price
$250.00
Regular price
$400.00
Options
Descriptions
ABB FS450R17KE3 – High-Voltage IGBT Power Module
ABB FS450R17KE3 is a high-voltage insulated-gate bipolar transistor (IGBT) power module designed for industrial motor drives, renewable energy inverters, and medium-power traction applications.
ABB FS450R17KE3 is a high-voltage insulated-gate bipolar transistor (IGBT) power module designed for industrial motor drives, renewable energy inverters, and medium-power traction applications.
Features
Low conduction and switching losses, integrated NTC temperature sensor, high short-circuit ruggedness, compatible with standard gate drivers.
Low conduction and switching losses, integrated NTC temperature sensor, high short-circuit ruggedness, compatible with standard gate drivers.
Technical Specifications
- Collector-emitter blocking voltage (VCES): 1,700 V
- Nominal collector current (IC): 450 A at 25 °C
- Maximum pulse current (ICM): 900 A
- Switching frequency range: 2 kHz to 8 kHz
- Saturation voltage (VCE(sat)): ≤ 2.45 V
- Gate-emitter control voltage: ±20 V
- Thermal resistance (Rth(j–c)): 0.12 K/W
- Operating junction temperature: -40 °C to +150 °C
- Package type: EconoDUAL 3
- Mounting torque: 0.8 N·m ±10%
