ABB 3BHB002000R0001 B25835S2205K007 IGBT Power Module
ABB IGBT Power Module B25835S2205K007
Description
The product is an ABB Integrated Gate Bipolar Transistor (IGBT) power module, model B25835S2205K007.
Features
This IGBT power module is designed for medium to high-power voltage source inverter applications, featuring high efficiency, low switching losses, and high short-circuit withstand capability.
Technical Specifications
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Voltage Rating: Rated voltage is 3300 V.
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Current Rating: Rated collector current is 1200 A at 80°C case temperature.
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Switching Speed: Fast switching with typical turn-off fall time of 0.4 microseconds.
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Thermal Resistance: Low thermal resistance junction-to-case of 0.012 K/W.
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Isolation Voltage: Isolation voltage between baseplate and terminals is 6000 V AC for 60 seconds.
ABB 3BHB002000R0001 B25835S2205K007 IGBT Power Module
ABB 3BHB002000R0001 B25835S2205K007 IGBT Power Module
ABB IGBT Power Module B25835S2205K007
Description
The product is an ABB Integrated Gate Bipolar Transistor (IGBT) power module, model B25835S2205K007.
Features
This IGBT power module is designed for medium to high-power voltage source inverter applications, featuring high efficiency, low switching losses, and high short-circuit withstand capability.
Technical Specifications
-
Voltage Rating: Rated voltage is 3300 V.
-
Current Rating: Rated collector current is 1200 A at 80°C case temperature.
-
Switching Speed: Fast switching with typical turn-off fall time of 0.4 microseconds.
-
Thermal Resistance: Low thermal resistance junction-to-case of 0.012 K/W.
-
Isolation Voltage: Isolation voltage between baseplate and terminals is 6000 V AC for 60 seconds.
